The MwT-5F is a dual gate GaAs MESFET device whose nominal 0.25 micron gate length and 300 micron dual gate width make it ideally suited to applications requiring high gain and high linearity in the 500 MHz to 26 GHz frequency range. MwT-5F is equally effective for either wideband (e.g. 2 to 26 GHz) or narrow-band applications. All chips are passivated with SiN (Silicon Nitride).